Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors ; volume:8 ; number:1 ; day:2 ; month:2 ; year:2024 ; pages:1-7 ; date:12.2024
npj 2D materials and applications ; 8, Heft 1 (2.2.2024), 1-7, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Illarionov, Yu. Yu
Karl, A.
Smets, Q.
Kaczer, B.
Knobloch, Theresia
Panarella, L.
Schram, T.
Brems, S.
Cott, D.
Asselberghs, I.
Grasser, Tibor
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1038/s41699-024-00445-0
- URN
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urn:nbn:de:101:1-2024041211084497496729
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:46 MESZ
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Beteiligte
- Illarionov, Yu. Yu
- Karl, A.
- Smets, Q.
- Kaczer, B.
- Knobloch, Theresia
- Panarella, L.
- Schram, T.
- Brems, S.
- Cott, D.
- Asselberghs, I.
- Grasser, Tibor
- SpringerLink (Online service)
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Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes
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