Low-temperature photoluminescence investigation of light-induced degradation in boron-doped CZ silicon
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource, 9 Seiten
- Language
-
Englisch
- Bibliographic citation
-
In: Physica status solidi(219), H. 17 - ISSN 1521-396X
In: 19. Gettering and Defect Engineering in Semiconductor Technology (GADEST) (Mondsee, 10.-16.09.2022)
In: Wiley-VCH, Weinheim
- Event
-
Veröffentlichung
- (where)
-
Ilmenau
- (who)
-
TU Ilmenau
- (when)
-
2022
- Creator
- DOI
-
10.1002/pssa.202200180
- URN
-
urn:nbn:de:101:1-2023121802063483080765
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:25 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Peh, Katharina
- Lauer, Kevin
- Flötotto, Aaron
- Schulze, Dirk
- Krischok, Stefan
- TU Ilmenau
Time of origin
- 2022
Other Objects (12)
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Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision
Calibration of low-temperature photoluminescence of boron-doped silicon with increased temperature precision
Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments
Light-induced lifetime degradation in boron-doped Czochralski silicon: Are oxygen dimers involved?
Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Light‐Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals
Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics
Assembling Boron-Doped Polyphenylenes: Part 1
Effect of the Annealing on the Low-Temperature Charge Transport Properties of Heavily Boron-Doped Nanocrystalline Silicon Films for Thermoelectric Applications
Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon
Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision
Calibration of low-temperature photoluminescence of boron-doped silicon with increased temperature precision
Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments
Light-induced lifetime degradation in boron-doped Czochralski silicon: Are oxygen dimers involved?
Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Light‐Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals
Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics
Assembling Boron-Doped Polyphenylenes: Part 1
Effect of the Annealing on the Low-Temperature Charge Transport Properties of Heavily Boron-Doped Nanocrystalline Silicon Films for Thermoelectric Applications
Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon
Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision
Calibration of low-temperature photoluminescence of boron-doped silicon with increased temperature precision
Investigation of Tl‐Doped Silicon by Low‐Temperature Photoluminescence during Light‐Induced Degradation Treatments
Light-induced lifetime degradation in boron-doped Czochralski silicon: Are oxygen dimers involved?
Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Light‐Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals
Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics
Assembling Boron-Doped Polyphenylenes: Part 1