Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory : towards synaptic functionalities
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: 10.1039/D2RA02456J
- Klassifikation
-
Elektrotechnik, Elektronik
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Universitätsbibliothek der RWTH Aachen
- (wann)
-
2022
- Urheber
-
Raeis-Hosseini, Niloufar
Chen, Shaochuan
Papavassiliou, Christos
Valov, Ilia
- DOI
-
10.18154/RWTH-2022-05434
- URN
-
urn:nbn:de:101:1-2022060303392361132844
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:38 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Raeis-Hosseini, Niloufar
- Chen, Shaochuan
- Papavassiliou, Christos
- Valov, Ilia
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2022
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