Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory : towards synaptic functionalities
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: 10.1039/D2RA02456J
- Classification
-
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2022
- Creator
-
Raeis-Hosseini, Niloufar
Chen, Shaochuan
Papavassiliou, Christos
Valov, Ilia
- DOI
-
10.18154/RWTH-2022-05434
- URN
-
urn:nbn:de:101:1-2022060303392361132844
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:38 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Raeis-Hosseini, Niloufar
- Chen, Shaochuan
- Papavassiliou, Christos
- Valov, Ilia
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2022
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A study on mechanism of resistance distribution characteristics of oxide-based resistive memory
Impact of program/erase operation on the performances of oxide-based resistive switching memory
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
XLV. Tantalum.
9. Tantal. ( Tantalum. )
Order XXI. - Tantalum
Novel intravascular tantalum oxide-based contrast agent achieves improved vascular contrast enhancement and conspicuity compared to Iopamidol in an animal multiphase CT protocol