Hochschulschrift | Online-Publikation
Electron paramagnetic resonance of process induced defects in silicon
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Sprache
-
Englisch
- Anmerkungen
-
Paderborn, Univ., Diss., 2001
- Schlagwort
-
Silicium
Siliciumdioxid
Grenzfläche
Störstelle
EDESR
- Urheber
-
Langhanki, Bertram
- URN
-
urn:nbn:de:hbz:466-20010101139
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:29 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
- Online-Publikation
Beteiligte
- Langhanki, Bertram
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