Hochschulschrift
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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4 [Maschinenschr. vervielf.]
- Extent
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111 gez. Bl. mit eingekl. Abb. u. graph. Darst.
- Language
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Deutsch
- Notes
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Berlin, T. U., F. f. allg. Ingenieurwiss., Diss. v. 26. Nov. 1954 (Nicht f. d. Aust.)
- Event
-
Veröffentlichung
- (where)
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Berlin
- (when)
-
1954
- Creator
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Grimm, Rudolf
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:07 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Grimm, Rudolf
Time of origin
- 1954
Other Objects (12)
Transmutationsdotierung und Gitterdefekte in entartetem InSb und InAs
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
Nanoscale modeling of dynamically tunable planar optical absorbers utilizing InAs and InSb in metal-oxide-semiconductor–metal configurations
Ramanspektroskopie an Oberflächenphononen von InP(110) und Si(001)-Sb
Thetapinch in eigenleitendem InSb
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
"mogul" InP!
Response of mechanical and optoelectronic properties for InP x As y Sb1–x–y /InAs system to composition
Inas Garten
Transmutationsdotierung und Gitterdefekte in entartetem InSb und InAs
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
Nanoscale modeling of dynamically tunable planar optical absorbers utilizing InAs and InSb in metal-oxide-semiconductor–metal configurations
Ramanspektroskopie an Oberflächenphononen von InP(110) und Si(001)-Sb
Thetapinch in eigenleitendem InSb
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
"mogul" InP!
Response of mechanical and optoelectronic properties for InP x As y Sb1–x–y /InAs system to composition
Inas Garten
Transmutationsdotierung und Gitterdefekte in entartetem InSb und InAs
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
Nanoscale modeling of dynamically tunable planar optical absorbers utilizing InAs and InSb in metal-oxide-semiconductor–metal configurations
Ramanspektroskopie an Oberflächenphononen von InP(110) und Si(001)-Sb
Thetapinch in eigenleitendem InSb
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
"mogul" InP!
Response of mechanical and optoelectronic properties for InP x As y Sb1–x–y /InAs system to composition