Response of mechanical and optoelectronic properties for InP x As y Sb1–x–y /InAs system to composition
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1976-8524
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Response of mechanical and optoelectronic properties for InP x As y Sb1–x–y /InAs system to composition ; volume:81 ; number:4 ; day:20 ; month:7 ; year:2022 ; pages:291-297 ; date:8.2022
Journal of the Korean Physical Society / Han'guk-Mulli-Hakhoe ; 81, Heft 4 (20.7.2022), 291-297, 8.2022
- Creator
-
Degheidy, A. R.
Abuali, A. M.
Elkenany, Elkenany. B.
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1007/s40042-022-00545-4
- URN
-
urn:nbn:de:101:1-2022110510510177137945
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:27 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Degheidy, A. R.
- Abuali, A. M.
- Elkenany, Elkenany. B.
- SpringerLink (Online service)
Other Objects (12)
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Ellipsoidal InAs Quantum Dots
Thermoelectric characterization of InAs nanowires
Bandkantennahe optische Nichtlinearitäten in InAs
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
Josephson-Feldeffekttransistoren auf p-Typ InAs
X-ray diffraction analysis of InAs nanowires
X-ray diffraction analysis of InAs nanowires
Modeling and Simulation of InAs Nanowire Transistors
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Ellipsoidal InAs Quantum Dots
Thermoelectric characterization of InAs nanowires
Bandkantennahe optische Nichtlinearitäten in InAs
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
Josephson-Feldeffekttransistoren auf p-Typ InAs
X-ray diffraction analysis of InAs nanowires
X-ray diffraction analysis of InAs nanowires
Modeling and Simulation of InAs Nanowire Transistors
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Ellipsoidal InAs Quantum Dots
Thermoelectric characterization of InAs nanowires
Bandkantennahe optische Nichtlinearitäten in InAs
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
Josephson-Feldeffekttransistoren auf p-Typ InAs
X-ray diffraction analysis of InAs nanowires
X-ray diffraction analysis of InAs nanowires
Modeling and Simulation of InAs Nanowire Transistors