Trap‐Assisted Memristive Switching in HfO 2 ‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Trap‐Assisted Memristive Switching in HfO 2 ‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy ; day:24 ; month:04 ; year:2023 ; extent:17
Advanced electronic materials ; (24.04.2023) (gesamt 17)
- Creator
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Zahari, Finn
Marquardt, Richard
Kalläne, Matthias
Gronenberg, Ole
Schlueter, Christoph
Matveyev, Yury
Haberfehlner, Georg
Diekmann, Florian
Nierhauve, Alena
Buck, Jens
Hanff, Arndt
Kolhatkar, Gitanjali
Kothleitner, Gerald
Kienle, Lorenz
Ziegler, Martin
Carstensen, Jürgen
Rossnagel, Kai
Kohlstedt, Hermann
- DOI
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10.1002/aelm.202201226
- URN
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urn:nbn:de:101:1-2023042515245933284593
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:48 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zahari, Finn
- Marquardt, Richard
- Kalläne, Matthias
- Gronenberg, Ole
- Schlueter, Christoph
- Matveyev, Yury
- Haberfehlner, Georg
- Diekmann, Florian
- Nierhauve, Alena
- Buck, Jens
- Hanff, Arndt
- Kolhatkar, Gitanjali
- Kothleitner, Gerald
- Kienle, Lorenz
- Ziegler, Martin
- Carstensen, Jürgen
- Rossnagel, Kai
- Kohlstedt, Hermann