Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory ; volume:11 ; number:1 ; day:12 ; month:8 ; year:2016 ; pages:1-8 ; date:12.2016
Nanoscale research letters ; 11, Heft 1 (12.8.2016), 1-8, 12.2016
- Creator
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Kim, Sungjun
- Contributor
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Park, Byung-Gook
SpringerLink (Online service)
- DOI
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10.1186/s11671-016-1572-9
- URN
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urn:nbn:de:1111-2016090929680
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:58 AM CEST
Data provider
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Associated
- Kim, Sungjun
- Park, Byung-Gook
- SpringerLink (Online service)
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