High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric ; day:18 ; month:11 ; year:2022 ; extent:7
Advanced optical materials ; (18.11.2022) (gesamt 7)
- Urheber
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Kalkan, Sirri Batuhan
Najafidehaghani, Emad
Gan, Ziyang
Drewniok, Jan
Lichtenegger, Michael F.
Hübner, Uwe
Urban, Alexander S.
George, Antony
Turchanin, Andrey
Nickel, Bert
- DOI
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10.1002/adom.202201653
- URN
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urn:nbn:de:101:1-2022111814203613895123
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:35 MESZ
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Beteiligte
- Kalkan, Sirri Batuhan
- Najafidehaghani, Emad
- Gan, Ziyang
- Drewniok, Jan
- Lichtenegger, Michael F.
- Hübner, Uwe
- Urban, Alexander S.
- George, Antony
- Turchanin, Andrey
- Nickel, Bert
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