High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric ; day:18 ; month:11 ; year:2022 ; extent:7
Advanced optical materials ; (18.11.2022) (gesamt 7)

Creator
Kalkan, Sirri Batuhan
Najafidehaghani, Emad
Gan, Ziyang
Drewniok, Jan
Lichtenegger, Michael F.
Hübner, Uwe
Urban, Alexander S.
George, Antony
Turchanin, Andrey
Nickel, Bert

DOI
10.1002/adom.202201653
URN
urn:nbn:de:101:1-2022111814203613895123
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:35 AM CEST

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