- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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High‐Temperature Annealing of Si‐Doped AlGaN ; day:31 ; month:01 ; year:2024 ; extent:9
Physica status solidi / A. A, Applications and materials science ; (31.01.2024) (gesamt 9)
- Urheber
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Zainal, Norzaini
Hagedorn, Sylvia
Netzel, Carsten
Kolbe, Tim
Weyers, Markus
- DOI
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10.1002/pssa.202300897
- URN
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urn:nbn:de:101:1-2024020114310772712789
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:22 MESZ
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Beteiligte
- Zainal, Norzaini
- Hagedorn, Sylvia
- Netzel, Carsten
- Kolbe, Tim
- Weyers, Markus
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