Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy

Abstract: Photoexcited muon spin spectroscopy (photo-μSR) is used to study excess charge carrier lifetimes in silicon. Experiments are performed on silicon wafers with very high bulk lifetimes with the surface passivation conditions intentionally modified to control the effective lifetime. When the effective lifetime is low (<500 μs), implanting the muons to different depths enables the reliable measurement of carrier lifetime as a function of distance from a surface. It is also demonstrated that the photo-μSR technique can measure effective carrier lifetimes in completed commercial gallium doped silicon passivated emitter and rear cell devices, with results validated with harmonically modulated photoluminescence imaging. It is discovered, however, that prolonged muon irradiation of samples with very long effective lifetimes (>10 ms) results in detectable degradation of the measured lifetime. Re-passivation of degraded samples with a temporary room temperature superacid-based passivation scheme demonstrates that degradation occurs in the silicon bulk. Deep-level transient spectroscopy measurements reveal the existence of several defect-related traps near the muon-exposed surface in concentrations of order 1010 cm−3 that are not present near the surface not exposed to muons. In contrast to the common perception of the μSR technique, our results demonstrate that muons are not inert probes and that beam-induced recombination activity modifies the bulk lifetime significantly in samples with high effective carrier lifetimes

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch
Anmerkungen
Journal of applied physics. - 132, 6 (2022) , 065704, ISSN: 1089-7550

Ereignis
Veröffentlichung
(wo)
Freiburg
(wer)
Universität
(wann)
2023
Urheber
Murphy, John D.
Grant, Nicholas Ewen
Pain, Sophie L.
Niewelt, Tim
Wratten, Ailish
Khorani, Edris
Markevich, Vladimir P.
Peaker, Anthony R.
Altermatt, Pietro P.
Lord, James S.
Yokoyama, Koji
Beteiligte Personen und Organisationen

DOI
10.1063/5.0099492
URN
urn:nbn:de:bsz:25-freidok-2341113
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
14.08.2025, 10:46 MESZ

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