Space charge layer effects in silicon studied by in situ surface transport

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Edler, Frederik; Miccoli, Ilio; Pfnür, Herbert; Tegenkamp, Christoph: Space charge layer effects in silicon studied by in situ surface transport. In: Journal of Physics Condensed Matter 31 (2019), Nr. 21, 214001. DOI: https://doi.org/10.1088/1361-648X/ab094e

Event: Veröffentlichung

(where): Hannover

(who): Gottfried Wilhelm Leibniz Universität Hannover

(when): 2019

Event: Veröffentlichung

(where): Hannover

(who): Technische Informationsbibliothek (TIB)

(when): 2019

Creator: Edler, Frederik
Miccoli, Ilio
Pfnür, Herbert
Tegenkamp, Christoph

DOI: 10.15488/10237

URN: urn:nbn:de:101:1-2020121001104549038060

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:33 AM CEST

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Associated

Edler, Frederik
Miccoli, Ilio
Pfnür, Herbert
Tegenkamp, Christoph
Gottfried Wilhelm Leibniz Universität Hannover
Technische Informationsbibliothek (TIB)

Time of origin

2019

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Space charge layer effects in silicon studied by in situ surface transport

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Other Objects (12)

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