Observation of Optical Orientation of Equilibrium Electrons in N-Type Semiconductors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Observation of Optical Orientation of Equilibrium Electrons in N-Type Semiconductors ; volume:118 ; number:1 ; day:11 ; month:12 ; year:2023 ; pages:S32-S34 ; date:12.2023
JETP letters ; 118, Heft 1 (11.12.2023), S32-S34, 12.2023
- Creator
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Ekimov, A. I.
Safarov, V. I.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1134/S0021364023130052
- URN
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urn:nbn:de:101:1-2024022614421070223933
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:45 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Ekimov, A. I.
- Safarov, V. I.
- SpringerLink (Online service)
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Optoelectronic spin memories of electrons in semiconductors
Rhodanine-Bridged Core-Expanded Naphthalene Diimide Derivatives for n-Type Semiconductors
Energy relaxation and intervalley relaxation of hot electrons in n-type germanium
Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method
Spatially nanoconfined N-type polymer semiconductors for stretchable ultrasensitive X-ray detection
Itinerant spintronic systems with electrons far from equilibrium
New insights into the photoassisted anodic reactions of n-type 4H SiC semiconductors
Optical Orientation of Carriers in Interband Transitions in Semiconductors
Controlled compensation via non-equilibrium electrons in ZnO
Processing and Characterization of Bulk Heterojunction Solar Cells Based on New Organic n-Type Semiconductors
Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
Influence of Spin Relaxation of “Hot” Electrons on the Effectiveness of Optical Orientation in Semiconductors
Optoelectronic spin memories of electrons in semiconductors
Rhodanine-Bridged Core-Expanded Naphthalene Diimide Derivatives for n-Type Semiconductors
Energy relaxation and intervalley relaxation of hot electrons in n-type germanium
Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method
Spatially nanoconfined N-type polymer semiconductors for stretchable ultrasensitive X-ray detection
Itinerant spintronic systems with electrons far from equilibrium
New insights into the photoassisted anodic reactions of n-type 4H SiC semiconductors
Optical Orientation of Carriers in Interband Transitions in Semiconductors
Controlled compensation via non-equilibrium electrons in ZnO