Influence of Spin Relaxation of “Hot” Electrons on the Effectiveness of Optical Orientation in Semiconductors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Influence of Spin Relaxation of “Hot” Electrons on the Effectiveness of Optical Orientation in Semiconductors ; volume:118 ; number:1 ; day:11 ; month:12 ; year:2023 ; pages:S29-S31 ; date:12.2023
JETP letters ; 118, Heft 1 (11.12.2023), S29-S31, 12.2023
- Creator
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Ekimov, A. I.
Safarov, V. I.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1134/S0021364023130064
- URN
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urn:nbn:de:101:1-2024022614413901881713
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:53 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Ekimov, A. I.
- Safarov, V. I.
- SpringerLink (Online service)
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Observation of Optical Orientation of Equilibrium Electrons in N-Type Semiconductors
Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method
Optoelectronic spin memories of electrons in semiconductors
Energy relaxation and intervalley relaxation of hot electrons in n-type germanium
Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors
Optical Orientation of Carriers in Interband Transitions in Semiconductors
Spin- and energy relaxation of hot electrons in Gallium-Arsenide
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Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
Orientation Polarization Spectroscopy : Toward an Atomistic Understanding of Dielectric Relaxation Processes
Relaxation regimes of the holographic electrons at charge neutrality after a local quench of chemical potential
Optical spectroscopy of donor bound excitons and spin relaxation of donor electrons in isotopically enriched silicon
Observation of Optical Orientation of Equilibrium Electrons in N-Type Semiconductors
Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method
Optoelectronic spin memories of electrons in semiconductors
Energy relaxation and intervalley relaxation of hot electrons in n-type germanium
Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors
Optical Orientation of Carriers in Interband Transitions in Semiconductors
Spin- and energy relaxation of hot electrons in Gallium-Arsenide
Localization and confinement of electrons in semiconductors : Mauterndorf, Austria, February 19 - 23, 1990
Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
Orientation Polarization Spectroscopy : Toward an Atomistic Understanding of Dielectric Relaxation Processes
Relaxation regimes of the holographic electrons at charge neutrality after a local quench of chemical potential