Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices ; volume:15 ; number:1 ; day:15 ; month:9 ; year:2023 ; pages:1-12 ; date:12.2023
NPG Asia Materials ; 15, Heft 1 (15.9.2023), 1-12, 12.2023
- Creator
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Kim, Keonhee
Lim, Jae Gwang
Hu, Su Man
Jeong, Yeonjoo
Kim, Jaewook
Lee, Suyoun
Kwak, Joon Young
Park, Jongkil
Hwang, Gyu Weon
Lee, Kyeong-Seok
Park, Seongsik
Lee, Wook-Seong
Ju, Byeong-Kwon
Park, Jong Keuk
Kim, Inho
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41427-023-00495-8
- URN
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urn:nbn:de:101:1-2024041211145539058559
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:01 AM CEST
Data provider
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Associated
- Kim, Keonhee
- Lim, Jae Gwang
- Hu, Su Man
- Jeong, Yeonjoo
- Kim, Jaewook
- Lee, Suyoun
- Kwak, Joon Young
- Park, Jongkil
- Hwang, Gyu Weon
- Lee, Kyeong-Seok
- Park, Seongsik
- Lee, Wook-Seong
- Ju, Byeong-Kwon
- Park, Jong Keuk
- Kim, Inho
- SpringerLink (Online service)
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