Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers ; volume:14 ; number:1 ; day:23 ; month:4 ; year:2024 ; pages:1-2 ; date:12.2024
Scientific reports ; 14, Heft 1 (23.4.2024), 1-2, 12.2024

Classification: Recht

Creator: Cao, Weicheng
Song, Chunyan
Liao, Hui
Yang, Ningxuan
Wang, Rui
Tang, Guanghui
Ji, Hongyu

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-024-60017-6

URN: urn:nbn:de:101:1-2407090919574.286291667797

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:44 AM CEST

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Cao, Weicheng
Song, Chunyan
Liao, Hui
Yang, Ningxuan
Wang, Rui
Tang, Guanghui
Ji, Hongyu
SpringerLink (Online service)

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Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

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Other Objects (12)

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Current annealing and electrical breakdown of epitaxial graphene

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Breakdown of equipartition in diffuse fields caused by energy leakage

Inference on breakdown frontiers

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Epitaxial Graphene on metals

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Scalable Epitaxial Growth of WSe2 Thin Films on SiO2/Si via a Self-Assembled PtSe2 Buffer Layer

Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers

Passivity and passivity breakdown on copper

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Current annealing and electrical breakdown of epitaxial graphene

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Breakdown of equipartition in diffuse fields caused by energy leakage

Inference on breakdown frontiers

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Epitaxial Graphene on metals

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Scalable Epitaxial Growth of WSe2 Thin Films on SiO2/Si via a Self-Assembled PtSe2 Buffer Layer

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Passivity and passivity breakdown on copper

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Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Current annealing and electrical breakdown of epitaxial graphene

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

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