Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN ; volume:10 ; number:1 ; day:27 ; month:2 ; year:2015 ; pages:1-5 ; date:12.2015
Nanoscale research letters ; 10, Heft 1 (27.2.2015), 1-5, 12.2015
- Urheber
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Hu, Xiao-Long
Wang, Hong
Zhang, Xi-Chun
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1186/s11671-015-0792-8
- URN
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urn:nbn:de:101:1-2021082321080414458571
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:54 MESZ
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Beteiligte
- Hu, Xiao-Long
- Wang, Hong
- Zhang, Xi-Chun
- SpringerLink (Online service)
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