Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite ; year:2021
Advanced functional materials ; (2021)

Creator: Shao, Shuyan
Talsma, Wytse
Pitaro, Matteo
Dong, Jingjin
Kahmann, Simon
Rommens, Alexander Joseph
Portale, Giuseppe
Loi, Maria Antonietta

DOI: 10.1002/adfm.202008478

URN: urn:nbn:de:101:1-2021020307274196128954

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:30 AM CEST

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Associated

Shao, Shuyan
Talsma, Wytse
Pitaro, Matteo
Dong, Jingjin
Kahmann, Simon
Rommens, Alexander Joseph
Portale, Giuseppe
Loi, Maria Antonietta

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Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

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Other Objects (12)

Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors

Charge carrier transport in two-dimensional tin halide perovskite field-effect transistors

Single crystal hybrid perovskite field-effect transistors

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Field-effect transistors based on solution processed zinc tin oxide

Room‐Temperature Halide Perovskite Field‐Effect Transistors by Ion Transport Mitigation

Metal nanoparticle field-effect transistor

Enhanced Charge Transport in Hybrid Perovskite Field‐Effect Transistors via Microstructure Control

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