- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy ; volume:12 ; number:1 ; day:15 ; month:8 ; year:2017 ; pages:1-7 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (15.8.2017), 1-7, 12.2017
- Classification
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Physik
- Creator
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Choi, Byoung Ki
- Contributor
-
Kim, Minu
Jung, Kwang-Hwan
Kim, Jwasoon
Yu, Kyu-Sang
Chang, Young Jun
SpringerLink (Online service)
- DOI
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10.1186/s11671-017-2266-7
- URN
-
urn:nbn:de:1111-2017102911351
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:25 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Choi, Byoung Ki
- Kim, Minu
- Jung, Kwang-Hwan
- Kim, Jwasoon
- Yu, Kyu-Sang
- Chang, Young Jun
- SpringerLink (Online service)
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Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
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Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy
Temperature Dependence of the Dielectric Function of Monolayer MoSe2
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces
Graphitic carbon grown on fluorides by molecular beam epitaxy
Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
On the doping of Silicon nanowires grown by molecular beam epitaxy
Electrical characterization of ZnO thin films grown by molecular beam epitaxy
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy
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