IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1573-482X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
-
IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon ; day:7 ; month:4 ; year:2017 ; pages:1-15
Journal of materials science / Materials in electronics ; (7.4.2017), 1-15
- Classification
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Physik
- Creator
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Sgourou, E. N.
- Contributor
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Angeletos, T.
Chroneos, A.
Londos, C. A.
SpringerLink (Online service)
- DOI
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10.1007/s10854-017-6798-5
- URN
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urn:nbn:de:1111-2017042314721
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
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Associated
- Sgourou, E. N.
- Angeletos, T.
- Chroneos, A.
- Londos, C. A.
- SpringerLink (Online service)
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Atomistic simulation study on silicon carbide precipitation in silicon
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New precipitation method for isolation of 99mTc from irradiated 100Mo target
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Transition‐Metal‐Doped NIR‐Emitting Silicon Nanocrystals
Electrical properties of iron-doped silicon at different stages of precipitation
Radiation damage of highly irradiated silicon sensors
The microstructural investigation of continuous-wave laser irradiated silicon rich silicon oxide
Temperature scaling of leakage current in irradiated silicon sensors
Temperature-dependent optical absorption spectroscopy of ion irradiated silicon carbide epilayers on silicon
Atomistic simulation study on silicon carbide precipitation in silicon
Atomistic simulation study on silicon carbide precipitation in silicon
Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system
Helium migration and precipitation in irradiated and annealed copper boron alloy
New precipitation method for isolation of 99mTc from irradiated 100Mo target
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