Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system

Abstract: A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence of the laser probe. A charge collection versus depth profile of the non-irradiated PIN diode is presented, where reflection on the rear silicon-air interface was observed. It is found that the time-over-threshold versus depth profile is particularly suitable to determine the boundaries of the DUT’s active volume. A depth scan of the irradiated PIN diode is discussed and a method to omit the single photon absorption background is presented. Finally, a charge collection measurement in the inter-pad region of the 5 × 5-multipad HPK LGAD is presented and it is demonstrated that TPA-TCT can be used to image the implantation and the electric field of segmented silicon devices in a three dimensional manner

Angaben zum Objekt

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch
• Anmerkungen: Journal of instrumentation. - 17, 08 (2022) , C08011, ISSN: 1748-0221

Beteiligte, Orts- und Zeitangaben

• Ereignis: Veröffentlichung
• (wo): Freiburg
• (wer): Universität
• (wann): 2022
• Urheber: Pape, Sebastian ; Fernández García, Marcos ; Moll, Michael ; Montero, Raúl ; Palomo, Francisco Rogelio ; Vila, Ivan ; Wiehe, Moritz

Weitere Informationen

• DOI: 10.1088/1748-0221/17/08/C08011
• URN: urn:nbn:de:bsz:25-freidok-2290536
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Letzte Aktualisierung: 25.03.2025, 13:56 MEZ