Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt 5 P 2
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt 5 P 2 ; day:29 ; month:12 ; year:2022 ; extent:7
Advanced electronic materials ; (29.12.2022) (gesamt 7)
- Creator
-
Mayo, Alex H.
Takahashi, Hidefumi
Ishiwata, Shintaro
Górnicka, Karolina
Winiarski, Michał J.
Jaroszynski, Jan
Cava, Robert J.
Xie, Weiwei
Klimczuk, Tomasz
- DOI
-
10.1002/aelm.202201120
- URN
-
urn:nbn:de:101:1-2022123014055744074913
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:36 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Mayo, Alex H.
- Takahashi, Hidefumi
- Ishiwata, Shintaro
- Górnicka, Karolina
- Winiarski, Michał J.
- Jaroszynski, Jan
- Cava, Robert J.
- Xie, Weiwei
- Klimczuk, Tomasz
Other Objects (12)
Linear magnetoresistance in compensated graphene bilayer
Magnetoresistance in a high-mobility two-dimensional electron gas
Wide temperature range magnetoresistance enhancement of La0.67Ca0.33MnO3: NiO nanocomposites
Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability
Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure
Compensated horner scheme
Compensated pathogenic deviations
Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas
Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium
Large positive magnetoresistance and high mobility in topological insulator candidate LaP
Selective Transition Enhancement in a g ‐Engineered Diradical
Magnetoresistance induced by rare strong scatterers in a high-mobility two-dimensional electron gas
Linear magnetoresistance in compensated graphene bilayer
Magnetoresistance in a high-mobility two-dimensional electron gas
Wide temperature range magnetoresistance enhancement of La0.67Ca0.33MnO3: NiO nanocomposites
Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability
Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure
Compensated horner scheme
Compensated pathogenic deviations
Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas
Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium
Large positive magnetoresistance and high mobility in topological insulator candidate LaP
Selective Transition Enhancement in a g ‐Engineered Diradical
Magnetoresistance induced by rare strong scatterers in a high-mobility two-dimensional electron gas
Linear magnetoresistance in compensated graphene bilayer
Magnetoresistance in a high-mobility two-dimensional electron gas
Wide temperature range magnetoresistance enhancement of La0.67Ca0.33MnO3: NiO nanocomposites
Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability
Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure
Compensated horner scheme
Compensated pathogenic deviations
Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas
Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium
Large positive magnetoresistance and high mobility in topological insulator candidate LaP
Selective Transition Enhancement in a g ‐Engineered Diradical