Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt 5 P 2
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt 5 P 2 ; day:29 ; month:12 ; year:2022 ; extent:7
Advanced electronic materials ; (29.12.2022) (gesamt 7)
- Urheber
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Mayo, Alex H.
Takahashi, Hidefumi
Ishiwata, Shintaro
Górnicka, Karolina
Winiarski, Michał J.
Jaroszynski, Jan
Cava, Robert J.
Xie, Weiwei
Klimczuk, Tomasz
- DOI
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10.1002/aelm.202201120
- URN
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urn:nbn:de:101:1-2022123014055744074913
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:36 MESZ
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Beteiligte
- Mayo, Alex H.
- Takahashi, Hidefumi
- Ishiwata, Shintaro
- Górnicka, Karolina
- Winiarski, Michał J.
- Jaroszynski, Jan
- Cava, Robert J.
- Xie, Weiwei
- Klimczuk, Tomasz
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Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure
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