Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
In: 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference / Smets, Arno et al. (Hrsg.). - München : WIP, 2017. - S. 557-560. - ISSN 2196-0992. - ISBN 3-936338-47-7
In: 33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017, 25. Sep 2017 - 29. Sep 2017, Amsterdam
- Klassifikation
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Elektrotechnik, Elektronik
- Ereignis
-
Veröffentlichung
- (wo)
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Konstanz
- (wer)
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Bibliothek der Universität Konstanz
- (wann)
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2017
- Urheber
- URN
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urn:nbn:de:bsz:352-2-9o5329ix7kfq7
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:54 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Herguth, Axel
- Derricks, Christian
- Hahn, Giso
- Bibliothek der Universität Konstanz
Entstanden
- 2017
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Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
Status of selective emitter technology
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
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A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times
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On the influence of advection cooling during degradation and regeneration of Boron-Oxygen defects using high intensities
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
Status of selective emitter technology
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions