On the influence of advection cooling during degradation and regeneration of Boron-Oxygen defects using high intensities
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: 36th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings. - München : WIP, 2019. - S. 116-119. - ISBN 3-936338-60-4
In: 36th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC), 9. Sep 2019 - 13. Sep 2019, Marseille
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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KOPS Universität Konstanz
- (when)
-
2019
- Creator
- URN
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urn:nbn:de:bsz:352-2-9h4bzchzd2617
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:46 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Herguth, Axel
- Derricks, Christian
- Hahn, Giso
- KOPS Universität Konstanz
Time of origin
- 2019
Other Objects (12)
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Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions
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Impact of Hydrogen in Ga‐Doped Silicon on Maximum LeTID Defect Density
A solution for in-situ spatially resolved intensity measurements in belt furnaces
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions
Ultra Fast Regeneration (UFO) : Teilprojekt der Universität Konstanz : Beschleunigung der Regenerationskinetik und Modellbildung. Schlussbericht, Projektlaufzeit 01.09.2016 bis 30.11.2019
Impact of Hydrogen in Ga‐Doped Silicon on Maximum LeTID Defect Density
A solution for in-situ spatially resolved intensity measurements in belt furnaces
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions
Ultra Fast Regeneration (UFO) : Teilprojekt der Universität Konstanz : Beschleunigung der Regenerationskinetik und Modellbildung. Schlussbericht, Projektlaufzeit 01.09.2016 bis 30.11.2019
Impact of Hydrogen in Ga‐Doped Silicon on Maximum LeTID Defect Density