Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices ; day:09 ; month:05 ; year:2023 ; extent:9
Advanced electronic materials ; (09.05.2023) (gesamt 9)
- Urheber
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Yamada, Shinya
Kato, Masatoshi
Ichikawa, Shuhei
Yamada, Michihiro
Naito, Takahiro
Fujiwara, Yasufumi
Hamaya, Kohei
- DOI
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10.1002/aelm.202300045
- URN
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urn:nbn:de:101:1-2023050917000067688733
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:54 MESZ
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Beteiligte
- Yamada, Shinya
- Kato, Masatoshi
- Ichikawa, Shuhei
- Yamada, Michihiro
- Naito, Takahiro
- Fujiwara, Yasufumi
- Hamaya, Kohei
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