Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells ; volume:12 ; number:1 ; day:2 ; month:9 ; year:2022 ; pages:1-8 ; date:12.2022
Scientific reports ; 12, Heft 1 (2.9.2022), 1-8, 12.2022
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Kim, Yong-Jin
Kweon, I Se
Min, Kwan Hong
Lee, Sang Hee
Choi, Sungjin
Jeong, Kyung Taek
Park, Sungeun
Song, Hee-eun
Kang, Min Gu
Kim, Ka-Hyun
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1038/s41598-022-18910-5
- URN
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urn:nbn:de:101:1-2022112009283516092694
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:29 MESZ
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Beteiligte
- Kim, Yong-Jin
- Kweon, I Se
- Min, Kwan Hong
- Lee, Sang Hee
- Choi, Sungjin
- Jeong, Kyung Taek
- Park, Sungeun
- Song, Hee-eun
- Kang, Min Gu
- Kim, Ka-Hyun
- SpringerLink (Online service)
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High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells
High‐Efficiency Graphene‐Oxide/Silicon Solar Cells with an Organic‐Passivated Interface
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