Dual-Site Doping and Low-Angle Grain Boundaries Lead to High Thermoelectric Performance in N-Type Bi2S3

zu Verbundenen Objekten

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
In: 10.1002/adfm.202306961

Ereignis
Veröffentlichung
(wo)
Aachen
(wer)
Universitätsbibliothek der RWTH Aachen
(wann)
2023
Urheber
Yang, Jian
Ye, Haolin
Zhang, Xiangzhao
Miao, Xin
Yang, Xiubo
Xie, Lin
Shi, Zhongqi
Chen, Shaoping
Zhou, Chongjian
Qiao, Guanjun
Wuttig, Matthias
Wang, Li
Liu, Guiwu
Yu, Yuan

DOI
10.18154/RWTH-2024-03518
URN
urn:nbn:de:101:1-2501110106219.871831094443
Rechteinformation
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
15.08.2025, 07:25 MESZ

Datenpartner

Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Original beim Datenpartner anzeigen

Beteiligte

  • Yang, Jian
  • Ye, Haolin
  • Zhang, Xiangzhao
  • Miao, Xin
  • Yang, Xiubo
  • Xie, Lin
  • Shi, Zhongqi
  • Chen, Shaoping
  • Zhou, Chongjian
  • Qiao, Guanjun
  • Wuttig, Matthias
  • Wang, Li
  • Liu, Guiwu
  • Yu, Yuan
  • Universitätsbibliothek der RWTH Aachen

Entstanden

  • 2023

Ähnliche Objekte (12)

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials

Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials

Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions

Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions

Atom probe tomography advances chalcogenide phase‐change and thermoelectric materials

Atom probe tomography advances chalcogenide phase‐change and thermoelectric materials

Atom Probe Tomography Advances Chalcogenide Phase-Change and Thermoelectric Materials

Atom Probe Tomography Advances Chalcogenide Phase-Change and Thermoelectric Materials

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Metavalent bonding impacts charge carrier transport across grain boundaries

Metavalent bonding impacts charge carrier transport across grain boundaries

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Verbundene Objekte