Dual-Site Doping and Low-Angle Grain Boundaries Lead to High Thermoelectric Performance in N-Type Bi2S3

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: 10.1002/adfm.202306961

Event: Veröffentlichung

(where): Aachen

(who): Universitätsbibliothek der RWTH Aachen

(when): 2023

Creator: Yang, Jian
Ye, Haolin
Zhang, Xiangzhao
Miao, Xin
Yang, Xiubo
Xie, Lin
Shi, Zhongqi
Chen, Shaoping
Zhou, Chongjian
Qiao, Guanjun
Wuttig, Matthias
Wang, Li
Liu, Guiwu
Yu, Yuan

DOI: 10.18154/RWTH-2024-03518

URN: urn:nbn:de:101:1-2501110106219.871831094443

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:25 AM CEST

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Associated

Yang, Jian
Ye, Haolin
Zhang, Xiangzhao
Miao, Xin
Yang, Xiubo
Xie, Lin
Shi, Zhongqi
Chen, Shaoping
Zhou, Chongjian
Qiao, Guanjun
Wuttig, Matthias
Wang, Li
Liu, Guiwu
Yu, Yuan
Universitätsbibliothek der RWTH Aachen

Time of origin

2023

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Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

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Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

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Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions

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Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

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Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

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Dual-Site Doping and Low-Angle Grain Boundaries Lead to High Thermoelectric Performance in N-Type Bi2S3

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Other Objects (12)

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials

Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions

Atom probe tomography advances chalcogenide phase‐change and thermoelectric materials

Atom Probe Tomography Advances Chalcogenide Phase-Change and Thermoelectric Materials

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Metavalent bonding impacts charge carrier transport across grain boundaries

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials

Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions

Atom probe tomography advances chalcogenide phase‐change and thermoelectric materials

Atom Probe Tomography Advances Chalcogenide Phase-Change and Thermoelectric Materials

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Metavalent bonding impacts charge carrier transport across grain boundaries

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials

Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions

Atom probe tomography advances chalcogenide phase‐change and thermoelectric materials

Atom Probe Tomography Advances Chalcogenide Phase-Change and Thermoelectric Materials

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions

Deformation Mechanisms of Inorganic Thermoelectric Materials with Plasticity

Metavalent bonding impacts charge carrier transport across grain boundaries

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Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

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