Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact ; volume:9 ; number:25 ; year:2022 ; extent:8
Advanced science ; 9, Heft 25 (2022) (gesamt 8)

Creator: Wang, Xiujun
Song, Sannian
Wang, Haomin
Guo, Tianqi
Xue, Yuan
Wang, Ruobing
Wang, HuiShan
Chen, Lingxiu
Jiang, Chengxin
Chen, Chen
Shi, Zhiyuan
Wu, Tianru
Song, Wenxiong
Zhang, Sifan
Watanabe, Kenji
Taniguchi, Takashi
Song, Zhitang
Xie, Xiaoming

DOI: 10.1002/advs.202202222

URN: urn:nbn:de:101:1-2022090515321837654887

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:29 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Wang, Xiujun
Song, Sannian
Wang, Haomin
Guo, Tianqi
Xue, Yuan
Wang, Ruobing
Wang, HuiShan
Chen, Lingxiu
Jiang, Chengxin
Chen, Chen
Shi, Zhiyuan
Wu, Tianru
Song, Wenxiong
Zhang, Sifan
Watanabe, Kenji
Taniguchi, Takashi
Song, Zhitang
Xie, Xiaoming

Other Objects (12)

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Emergent helical edge states in a hybridized three-dimensional topological insulator

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Insulating State in Low‐Disorder Graphene Nanoribbons

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Supercurrent mediated by helical edge modes in bilayer graphene

Electrochemistry at the Edge of a van der Waals Heterostructure

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Emergent helical edge states in a hybridized three-dimensional topological insulator

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Insulating State in Low‐Disorder Graphene Nanoribbons

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Supercurrent mediated by helical edge modes in bilayer graphene

Electrochemistry at the Edge of a van der Waals Heterostructure

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Emergent helical edge states in a hybridized three-dimensional topological insulator

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Insulating State in Low‐Disorder Graphene Nanoribbons

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Supercurrent mediated by helical edge modes in bilayer graphene

Electrochemistry at the Edge of a van der Waals Heterostructure

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Emergent helical edge states in a hybridized three-dimensional topological insulator

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Insulating State in Low‐Disorder Graphene Nanoribbons

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Supercurrent mediated by helical edge modes in bilayer graphene

Electrochemistry at the Edge of a van der Waals Heterostructure

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Emergent helical edge states in a hybridized three-dimensional topological insulator

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Insulating State in Low‐Disorder Graphene Nanoribbons

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Supercurrent mediated by helical edge modes in bilayer graphene

Electrochemistry at the Edge of a van der Waals Heterostructure

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Emergent helical edge states in a hybridized three-dimensional topological insulator

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Insulating State in Low‐Disorder Graphene Nanoribbons

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Supercurrent mediated by helical edge modes in bilayer graphene

Electrochemistry at the Edge of a van der Waals Heterostructure

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

Related objects

Reset password