Influence of active electrode impurity on memristive characteristics of ECM devices
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: 10.1007/s10008-024-05821-w
- Classification
-
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2024
- Creator
-
Michieletti, Fabio
Chen, Shaochuan
Schmidt-Weber, Carsten P.
Ricciardi, Carlo
Ohno, Takeo
Valov, Ilia
- DOI
-
10.18154/RWTH-2024-01710
- URN
-
urn:nbn:de:101:1-2024022400432335882142
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:50 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Michieletti, Fabio
- Chen, Shaochuan
- Schmidt-Weber, Carsten P.
- Ricciardi, Carlo
- Ohno, Takeo
- Valov, Ilia
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2024
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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
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role of vacancy dynamics in two-dimensional memristive devices
Controlling the Formation of Conductive Pathways in Memristive Devices
Tailored electrical characteristics in multilayer metal-oxide-based-memristive devices
Memristive devices for metrological applications
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Transmission Electron Microscopy on Memristive Devices
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Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices
Memristive Devices for Time Domain Compute-in-Memory
Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
Structure-Property-Correlations in HfO₂ based Memristive Devices
Area-dependent resistive switching in PCMO-based memristive devices
role of vacancy dynamics in two-dimensional memristive devices
Controlling the Formation of Conductive Pathways in Memristive Devices