Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets ; volume:29 ; number:4 ; year:2019 ; extent:9
Advanced functional materials ; 29, Heft 4 (2019) (gesamt 9)
- DOI
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10.1002/adfm.201804387
- URN
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urn:nbn:de:101:1-2022071807514566765265
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:26 MESZ
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