Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets ; volume:29 ; number:4 ; year:2019 ; extent:9
Advanced functional materials ; 29, Heft 4 (2019) (gesamt 9)

Creator: Higgins, Thomas M.
Finn, Sean
Matthiesen, Maik
Grieger, Sebastian
Synnatschke, Kevin
Brohmann, Maximilian
Rother, Marcel
Backes, Claudia
Zaumseil, Jana

DOI: 10.1002/adfm.201804387

URN: urn:nbn:de:101:1-2022071807514566765265

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:26 AM CEST

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Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets

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