Subsurface Engineering Induced Fermi Level De‐pinning in Metal Oxide Semiconductors for Photoelectrochemical Water Splitting
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Subsurface Engineering Induced Fermi Level De‐pinning in Metal Oxide Semiconductors for Photoelectrochemical Water Splitting ; day:24 ; month:01 ; year:2023 ; extent:9
Angewandte Chemie / International edition. International edition ; (24.01.2023) (gesamt 9)
- Urheber
-
Wang, Jun
Ni, Ganghai
Liao, Wanru
Liu, Kang
Chen, Jiawei
Liu, Fangyang
Zhang, Zongliang
Jia, Ming
Li, Jie
Fu, Junwei
Pensa, Evangelina
Jiang, Liangxing
Bian, Zhenfeng
Cortés, Emiliano
Liu, Min
- DOI
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10.1002/anie.202217026
- URN
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urn:nbn:de:101:1-2023012514142962432852
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:30 MESZ
Datenpartner
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Beteiligte
- Wang, Jun
- Ni, Ganghai
- Liao, Wanru
- Liu, Kang
- Chen, Jiawei
- Liu, Fangyang
- Zhang, Zongliang
- Jia, Ming
- Li, Jie
- Fu, Junwei
- Pensa, Evangelina
- Jiang, Liangxing
- Bian, Zhenfeng
- Cortés, Emiliano
- Liu, Min
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Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
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Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
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Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
Designing semiconductors and catalysts for photoelectrochemical hydrogen production
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
Protection Materials on III–V Semiconductors for Photoelectrochemical CO Reduction
Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors
Chemically induced Fermi level pinning effects of high-k dielectrics on graphene
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Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires
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