Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications ; volume:8 ; number:1 ; day:7 ; month:2 ; year:2013 ; pages:1-5 ; date:12.2013
Nanoscale research letters ; 8, Heft 1 (7.2.2013), 1-5, 12.2013
- Klassifikation
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Physik
- Urheber
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Salomon, Damien
Dussaigne, Amelie
Lafossas, Matthieu
Durand, Christophe
Bougerol, Catherine
Ferret, Pierre
Eymery, Joel
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/1556-276X-8-61
- URN
-
urn:nbn:de:101:1-2019060900592625851697
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
2025-08-14T11:03:36+0200
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Beteiligte
- Salomon, Damien
- Dussaigne, Amelie
- Lafossas, Matthieu
- Durand, Christophe
- Bougerol, Catherine
- Ferret, Pierre
- Eymery, Joel
- SpringerLink (Online service)
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