Hochschulschrift
Analysis of MBE-grown II-VI hetero-interfaces and quantum-dots by Raman spectroscopy
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
-
30 cm
- Extent
-
B, 94, XIII S.
- Language
-
Englisch
- Notes
-
graph. Darst.
Würzburg, Univ., Diss., 2012 (Nicht für den Austausch)
- Keyword
-
Zwei-Sechs-Halbleiter ; n-Halbleiter ; Wide-gap-Halbleiter ; Molekularstrahlepitaxie
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.03.2025, 11:44 AM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
Other Objects (12)
Analysis of MBE-grown II-VI Hetero-Interfaces and Quantum-Dots by Raman Spectroscopy
Optical and magnetic properties of MBE-grown manganese sulfide layers
Electrochemical studies of MBE-grown CaF2/BaF2 heterolayers
Wide gap II-VI semiconductor heterostructures : MBE growth, biexcitonic and excitonic properties
Hopping conduction in MBE-grown zinc selenide in high magnetic fields
Submonolayer-grown quantum dots for nonlinear device applications
Optical and magnetic resonance properties of II-VI quantum dots
MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes
MBE
Zu den optischen Eigenschaften von II-VI Quantum Dots in Glasmatrizen
Optical and magnetic resonance properties of II-VI quantum qots [dots]
Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region
Analysis of MBE-grown II-VI Hetero-Interfaces and Quantum-Dots by Raman Spectroscopy
Optical and magnetic properties of MBE-grown manganese sulfide layers
Electrochemical studies of MBE-grown CaF2/BaF2 heterolayers
Wide gap II-VI semiconductor heterostructures : MBE growth, biexcitonic and excitonic properties
Hopping conduction in MBE-grown zinc selenide in high magnetic fields
Submonolayer-grown quantum dots for nonlinear device applications
Optical and magnetic resonance properties of II-VI quantum dots
MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes
MBE
Zu den optischen Eigenschaften von II-VI Quantum Dots in Glasmatrizen
Optical and magnetic resonance properties of II-VI quantum qots [dots]
Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region
Analysis of MBE-grown II-VI Hetero-Interfaces and Quantum-Dots by Raman Spectroscopy
Optical and magnetic properties of MBE-grown manganese sulfide layers
Electrochemical studies of MBE-grown CaF2/BaF2 heterolayers
Wide gap II-VI semiconductor heterostructures : MBE growth, biexcitonic and excitonic properties
Hopping conduction in MBE-grown zinc selenide in high magnetic fields
Submonolayer-grown quantum dots for nonlinear device applications
Optical and magnetic resonance properties of II-VI quantum dots
MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes
MBE
Zu den optischen Eigenschaften von II-VI Quantum Dots in Glasmatrizen
Optical and magnetic resonance properties of II-VI quantum qots [dots]