Effect of SiO 2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Effect of SiO 2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors ; day:27 ; month:12 ; year:2023 ; extent:5
Physica status solidi / A. A, Applications and materials science ; (27.12.2023) (gesamt 5)
- Urheber
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Du, Yangming
Madathil, Sankara Narayanan Ekkanath
Kawai, Hiroji
Yagi, Shuichi
Narui, Hironobu
- DOI
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10.1002/pssa.202300199
- URN
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urn:nbn:de:101:1-2023122814010891027538
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:21 MESZ
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Beteiligte
- Du, Yangming
- Madathil, Sankara Narayanan Ekkanath
- Kawai, Hiroji
- Yagi, Shuichi
- Narui, Hironobu
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