Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
1 Online-Ressource.
- Sprache
-
Englisch
- Erschienen in
-
Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions ; volume:14 ; number:1 ; day:9 ; month:3 ; year:2024 ; pages:1-12 ; date:12.2024
Scientific reports ; 14, Heft 1 (9.3.2024), 1-12, 12.2024
- Urheber
-
Chava, Phanish
Kateel, Vaishnavi
Watanabe, Kenji
Taniguchi, Takashi
Helm, Manfred
Mikolajick, Thomas
Erbe, Artur
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41598-024-56455-x
- URN
-
urn:nbn:de:101:1-2405122117546.476371034193
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:56 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Chava, Phanish
- Kateel, Vaishnavi
- Watanabe, Kenji
- Taniguchi, Takashi
- Helm, Manfred
- Mikolajick, Thomas
- Erbe, Artur
- SpringerLink (Online service)
Ähnliche Objekte (12)
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Nanoscale resistive switching memory devices: a review
Assessment of Back‐End‐of‐Line Compatibility of Sputtered HfO 2 ‐Based Ferroelectrics
From Ferroelectric Material Optimization to Neuromorphic Devices
Characterization of Novel Pyroelectrics : From Bulk GaN to Thin Film HfO2
Reliability Investigations of MOSFETs using RF Small Signal Characterization
Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes
Top-down fabrication of reconfigurable nanowire-electronics
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Nanoscale resistive switching memory devices: a review
Assessment of Back‐End‐of‐Line Compatibility of Sputtered HfO 2 ‐Based Ferroelectrics
From Ferroelectric Material Optimization to Neuromorphic Devices
Characterization of Novel Pyroelectrics : From Bulk GaN to Thin Film HfO2
Reliability Investigations of MOSFETs using RF Small Signal Characterization
Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes
Top-down fabrication of reconfigurable nanowire-electronics
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Nanoscale resistive switching memory devices: a review
Assessment of Back‐End‐of‐Line Compatibility of Sputtered HfO 2 ‐Based Ferroelectrics
From Ferroelectric Material Optimization to Neuromorphic Devices
Characterization of Novel Pyroelectrics : From Bulk GaN to Thin Film HfO2
Reliability Investigations of MOSFETs using RF Small Signal Characterization
Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes
Top-down fabrication of reconfigurable nanowire-electronics