- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH ; volume:13 ; number:1 ; day:29 ; month:12 ; year:2018 ; pages:1-9 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (29.12.2018), 1-9, 12.2018
- Creator
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1186/s11671-018-2833-6
- URN
-
urn:nbn:de:101:1-2019022808235199721138
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 11:03 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Steidl, Matthias
- Wu, Mingjian
- Peh, Katharina
- Kleinschmidt, Peter
- Spiecker, Erdmann
- Hannappel, Thomas
- SpringerLink (Online service)
Other Objects (12)
Impact of N incorporation on VLS growth of GaP(N) nanowires utilizing UDMH
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Modeling of the growth of GaAs–AlGaAs core–shell nanowires
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InGaN nanowires on silicon
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
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Impact of N incorporation on VLS growth of GaP(N) nanowires utilizing UDMH
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
Optical properties of gallium phosphide (GaP) nanowires
Synthesis and Characterization of Glomerate GaN Nanowires
GaN nanowires on diamond
Modeling of the growth of GaAs–AlGaAs core–shell nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
Optimization of Ohmic Contacts to p-GaAs Nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
InGaN nanowires on silicon
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires
Impact of N incorporation on VLS growth of GaP(N) nanowires utilizing UDMH
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
Optical properties of gallium phosphide (GaP) nanowires
Synthesis and Characterization of Glomerate GaN Nanowires
GaN nanowires on diamond
Modeling of the growth of GaAs–AlGaAs core–shell nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
Optimization of Ohmic Contacts to p-GaAs Nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
InGaN nanowires on silicon
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires