- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH ; volume:13 ; number:1 ; day:29 ; month:12 ; year:2018 ; pages:1-9 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (29.12.2018), 1-9, 12.2018
- Urheber
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1186/s11671-018-2833-6
- URN
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urn:nbn:de:101:1-2019022808235199721138
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:03 MESZ
Datenpartner
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Beteiligte
- Steidl, Matthias
- Wu, Mingjian
- Peh, Katharina
- Kleinschmidt, Peter
- Spiecker, Erdmann
- Hannappel, Thomas
- SpringerLink (Online service)
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Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
Optical properties of gallium phosphide (GaP) nanowires
Synthesis and Characterization of Glomerate GaN Nanowires
GaN nanowires on diamond
Modeling of the growth of GaAs–AlGaAs core–shell nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
Optimization of Ohmic Contacts to p-GaAs Nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
InGaN nanowires on silicon
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