A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Applied Physics Letters 100.12 (2012): 07.11.2012
- Classification
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Physik
- Keyword
-
-
- Event
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Veröffentlichung
- (where)
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Erlangen
- (who)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
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2012
- Contributor
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Krach, Florian
Hertel, Stefan
Waldmann, D.
Jobst, Johannes
Krieger, Michael
Reshanov, S.
Schöner, A.
Weber, Heiko B.
- URN
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urn:nbn:de:bvb:29-opus-38192
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:51 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Krach, Florian
- Hertel, Stefan
- Waldmann, D.
- Jobst, Johannes
- Krieger, Michael
- Reshanov, S.
- Schöner, A.
- Weber, Heiko B.
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2012
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In–situ strain control in epitaxial silicon carbide compound semiconductor
Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene
Polarization Doping and Work Function of Epitaxial Graphene on Silicon Carbide
Epitaxial Cubic Silicon Carbide Photocathodes for Visible‐Light‐Driven Water Splitting
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Gateless Patterning in Epitaxial Graphene on Silicon Carbide (0001): Quantum Transport and THz Response
Charge transport in epitaxial graphene on silicon carbide(0001): The role of mosaic-like disorder.
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