Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction ; volume:15 ; number:1 ; day:16 ; month:7 ; year:2020 ; pages:1-8 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (16.7.2020), 1-8, 12.2020
- Creator
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Sun, Tao
Luo, Xiaorong
Wei, Jie
Yang, Chao
Zhang, Bo
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-020-03376-z
- URN
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urn:nbn:de:101:1-2020091220164139979668
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:52 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sun, Tao
- Luo, Xiaorong
- Wei, Jie
- Yang, Chao
- Zhang, Bo
- SpringerLink (Online service)
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