High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1543-186X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding ; volume:39 ; number:8 ; day:22 ; month:5 ; year:2010 ; pages:1125-1132 ; date:8.2010
Journal of electronic materials ; 39, Heft 8 (22.5.2010), 1125-1132, 8.2010
- Urheber
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Bahk, Je-Hyeong
Zeng, Gehong
Zide, Joshua M. O.
Lu, Hong
Singh, Rajeev
Liang, Di
Ramu, Ashok T.
Burke, Peter
Bian, Zhixi
Gossard, Arthur C.
Shakouri, Ali
Bowers, John E.
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1007/s11664-010-1258-5
- URN
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urn:nbn:de:101:1-2022021317494837447474
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:28 MESZ
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Beteiligte
- Bahk, Je-Hyeong
- Zeng, Gehong
- Zide, Joshua M. O.
- Lu, Hong
- Singh, Rajeev
- Liang, Di
- Ramu, Ashok T.
- Burke, Peter
- Bian, Zhixi
- Gossard, Arthur C.
- Shakouri, Ali
- Bowers, John E.
- SpringerLink (Online service)
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