Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible

Abstract: In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch

References and Relationships

• Bibliographic citation: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible ; volume:55 ; number:8 ; year:2020 ; extent:8 ; Crystal research and technology ; 55, Heft 8 (2020) (gesamt 8)

Contributors, Places and Time

• Creator: Lorenz‐Meyer, M. Nicolai L. ; Menzel, Robert ; Dadzis, Kaspars ; Nikiforova, Angelina ; Riemann, Helge

Further information

• DOI: 10.1002/crat.202000044
• URN: urn:nbn:de:101:1-2022062412024388375903
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 15.08.2025, 7:35 AM CEST