Black silicon significantly enhances phosphorus diffusion gettering

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Black silicon significantly enhances phosphorus diffusion gettering ; volume:8 ; number:1 ; day:31 ; month:1 ; year:2018 ; pages:1-6 ; date:12.2018
Scientific reports ; 8, Heft 1 (31.1.2018), 1-6, 12.2018

Classification: Physik

Creator: Pasanen, Toni P.

Contributor: Laine, Hannu S.
Vähänissi, Ville
Schön, Jonas
Savin, Hele
SpringerLink (Online service)

DOI: 10.1038/s41598-018-20494-y

URN: urn:nbn:de:101:1-2018090622531923488878

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:34 AM CEST

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Pasanen, Toni P.
Laine, Hannu S.
Vähänissi, Ville
Schön, Jonas
Savin, Hele
SpringerLink (Online service)

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Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

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Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

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Thermodynamics of Phosphorus Removal from Silicon in Solvent Refining of Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Silicon increases the phosphorus availability of Arctic soils

Non-gaussian diffusion model for phosphorus in silicon heavy-doped junctions

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Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

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Removal Rate of Phosphorus from Molten Silicon

Thermodynamics of Phosphorus Removal from Silicon in Solvent Refining of Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

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Black silicon significantly enhances phosphorus diffusion gettering

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Other Objects (12)

Non-gaussian diffusion model for phosphorus in silicon heavy-doped junctions

Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Ammonium nutrition enhances rhizosphere mobilization and uptake of silicon in white lupin grown in low phosphorus soil

Removal Rate of Phosphorus from Molten Silicon

Thermodynamics of Phosphorus Removal from Silicon in Solvent Refining of Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Silicon increases the phosphorus availability of Arctic soils

Silicon increases the phosphorus availability of Arctic soils

Non-gaussian diffusion model for phosphorus in silicon heavy-doped junctions

Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Ammonium nutrition enhances rhizosphere mobilization and uptake of silicon in white lupin grown in low phosphorus soil

Removal Rate of Phosphorus from Molten Silicon

Thermodynamics of Phosphorus Removal from Silicon in Solvent Refining of Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Silicon increases the phosphorus availability of Arctic soils

Silicon increases the phosphorus availability of Arctic soils

Non-gaussian diffusion model for phosphorus in silicon heavy-doped junctions

Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Ammonium nutrition enhances rhizosphere mobilization and uptake of silicon in white lupin grown in low phosphorus soil

Removal Rate of Phosphorus from Molten Silicon

Thermodynamics of Phosphorus Removal from Silicon in Solvent Refining of Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Silicon increases the phosphorus availability of Arctic soils

Silicon increases the phosphorus availability of Arctic soils

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