Removal Rate of Phosphorus from Molten Silicon
Abstract: An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Removal Rate of Phosphorus from Molten Silicon ; volume:30 ; number:1-2 ; year:2011 ; pages:17-22
High temperature materials and processes ; 30, Heft 1-2 (2011), 17-22
- Urheber
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Kemmotsu, Takayuki
Nagai, Takashi
Maeda, Masafumi
- DOI
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10.1515/htmp.2011.002
- URN
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urn:nbn:de:101:1-2501280430432.645006335851
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:21 MESZ
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Beteiligte
- Kemmotsu, Takayuki
- Nagai, Takashi
- Maeda, Masafumi
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