Removal Rate of Phosphorus from Molten Silicon

Abstract: An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Removal Rate of Phosphorus from Molten Silicon ; volume:30 ; number:1-2 ; year:2011 ; pages:17-22
High temperature materials and processes ; 30, Heft 1-2 (2011), 17-22

Urheber
Kemmotsu, Takayuki
Nagai, Takashi
Maeda, Masafumi

DOI
10.1515/htmp.2011.002
URN
urn:nbn:de:101:1-2501280430432.645006335851
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
15.08.2025, 07:21 MESZ

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Beteiligte

  • Kemmotsu, Takayuki
  • Nagai, Takashi
  • Maeda, Masafumi

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