Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure ; volume:14 ; number:1 ; day:3 ; month:5 ; year:2024 ; pages:1-12 ; date:12.2024
Scientific reports ; 14, Heft 1 (3.5.2024), 1-12, 12.2024
- Urheber
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Ahmad, Md Akram
Kumar, Pankaj
Mech, Bhubon Chandra
Kumar, Jitendra
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-024-59908-5
- URN
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urn:nbn:de:101:1-2407142117159.886666064642
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:50 MESZ
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Beteiligte
- Ahmad, Md Akram
- Kumar, Pankaj
- Mech, Bhubon Chandra
- Kumar, Jitendra
- SpringerLink (Online service)
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