Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure ; volume:14 ; number:1 ; day:3 ; month:5 ; year:2024 ; pages:1-12 ; date:12.2024
Scientific reports ; 14, Heft 1 (3.5.2024), 1-12, 12.2024

Creator
Ahmad, Md Akram
Kumar, Pankaj
Mech, Bhubon Chandra
Kumar, Jitendra
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-024-59908-5
URN
urn:nbn:de:101:1-2407142117159.886666064642
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:50 AM CEST

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Associated

  • Ahmad, Md Akram
  • Kumar, Pankaj
  • Mech, Bhubon Chandra
  • Kumar, Jitendra
  • SpringerLink (Online service)

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